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| AP4226AGM Pb Free Plating Product Advanced Power Electronics Corp. Low On-Resistance Simple Drive Requirement Dual N MOSFET Package RoHS Compliant SO-8 S1 G1 D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 30V 18m 8.7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 20 8.7 7 40 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200508061-1/4 AP4226AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.01 8 14.5 2.3 7.7 7.2 8.6 24.8 8.6 950 220 160 1 Max. Units 18 24 3 1 25 100 23 1420 1.5 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/s Min. - Typ. 25 21 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad. 2/4 AP4226AGM 40 40 T A = 25 C 30 o ID , Drain Current (A) 10V 7.0 V 5.0 V 4.5 V ID , Drain Current (A) V G = 3.0 V T A = 150 o C 30 10V 7.0 V 5.0 V 4.5 V V G = 3.0 V 20 20 10 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.6 ID=6A T A =25 50 ID=8A V G =10V Normalized RDS(ON) 2 4 6 8 10 1.3 RDS(ON) (m) 40 30 1.0 20 10 0.7 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 30.0 8 6 T j =150 o C T j =25 o C RDS(ON) (m) IS(A) 4 20.0 V GS =4.5V V GS =10V 2 0 10.0 0 0.2 0.4 0.6 0.8 1 1.2 0 10 20 30 40 V SD , Source-to-Drain Voltage (V) I D , Drain Current (A) Fig 5. Forward Characteristic of Reverse Diode Fig 6. On-Resistance vs. Drain Current 3/4 AP4226AGM f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) 12 ID=8A V DS =15V V DS =20V V DS =24V C (pF) 8 1000 C iss 4 C oss C rss 0 0 10 20 30 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 100us 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 PDM t T Single Pulse 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 135/W 0.1 T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =5V T j =25 o C T j =150 o C VG QG 4.5V QGS QGD 30 ID , Drain Current (A) 20 10 Charge 0 Q 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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